HKW75N65SHRA

產(chǎn)品描述

超低開(kāi)關(guān)損耗及通態(tài)損耗,內(nèi)部集成軟快恢復(fù)二極管

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優(yōu)勢(shì)介紹

  • Ultra-low switching losses

  • Benchmark efficiency in hard switching topologies

  • Plug-and-play replacement of pure Si-based IGBT

  • Internal integrated SiC Schottky Diode (SBD)

  • Maximum junction temperature 175℃

  • Qualified according to JEDEC

  • RoHS compliant

28V LDMOS MMIC

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